| 摘要 |
<p>A semiconductor integrated circuit device, and method of manufacturing the same, includes an inductor with improved inductance and an improved quality factor (Q-factor) that can be miniaturized. In one example, an inductor ( 3 ) is provided on an insulating layer ( 2 ) of a multilayer interconnection layer ( 1 ). The inductor ( 3 ) is formed by a spiral arrangement of a wiring ( 3 a). A lamination film ( 14 ) is provided in an internal region ( 13 ) of an inductor ( 3 ) on insulating layer ( 2 ), and can be formed by laminating a titanium-tungsten (TiW) layer ( 9 ), a copper (Cu) layer ( 10 ), a ferromagnetic substance layer ( 15 ) made of nickel (Ni), a Cu layer ( 11 ), and a TiW layer ( 12 ), in that order. A lower surface of ferromagnetic substance layer ( 15 ) can be lower than an upper surface of wiring layer ( 3 a), and an upper surface of ferromagnetic substance layer ( 15 ) can be higher than a lower surface of wiring layer ( 3 a). As a result, a lower portion of ferromagnetic substance layer ( 15 ) can be at the same layer (level) as wiring layer ( 3 a). An upper surface of lamination film ( 14 ) can be made higher than a wiring layer ( 3 a), and a lower surface of lamination film ( 14 ) can be made lower than a lower surface of a wiring layer ( 3 a).</p> |
