| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To maintain a remaining film thickness of an insulating film on a trimming fuse stably with sufficient precision without adding a process of forming an etching stop layer and a dedicated film as an insulating film on the trimming fuse at an trimming opening portion. <P>SOLUTION: A resistive element 15c is formed on a sidewall insulating film 11c. A sidewall insulating film 11b is formed on a trimming fuse 13 at a trimming opening 25. An insulating film sidewall 11a is formed by carrying out etch-back treatment on the sidewall insulating film before the sidewall insulating films 11b, 11c are patterned, and the dimension W of the insulating sidewall 11a in a direction crossing the side face of a gate electrode 9 is equal to thicknesses T of the sidewall insulating films 11b, 11c. On the sidewall insulating film 11b, a frame-shaped etching stop layer residue 15a which is formed of the same material as the resistive element 15c and the cross section of which is exposed to the sidewall of the trimming opening 15a is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
