SEMICONDUCTOR NANOWIRE MOSFET WITH DOPED EPITAXIAL CONTACTS FOR SOURCE AND DRAIN

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor (FET) with a channel formed by a semiconductor nanowire (semiconductor nanowire channel) and doped semiconductor source and drain regions. SOLUTION: A FET structure with a semiconductor nanowire forming the FET channel and doped source and drain regions formed by radial epitaxy from the semiconductor nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy. COPYRIGHT: (C)2008,JPO&INPIT