| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask blank and a mask, wherein the linearity is suppressed to 10 nm or less by suppressing a difference (real dimensional difference) between a design dimension of a line width of a transfer pattern on a transfer mask and a dimension of a line width of a transfer pattern formed on a substrate. <P>SOLUTION: In the method for manufacturing a mask blank, a thin film for forming a mask pattern is formed on a substrate 12 and a chemically amplified resist film is formed above the thin film, wherein the total amount of organic acids present on the face of the thin film where the resist film is formed is controlled to 1μg/cm<SP>2</SP>or less, and then the resist film is formed on the face. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
