发明名称 DRAWING PATTERN RESIZING METHOD AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resizing method of further high precision drawing pattern against the size variation produced by the loading effect. SOLUTION: The resizing method of drawing pattern includes a calculation process (S102) to caluculate a first amount of size correction of a pattern to correct the size error of the pattern produced by the loading effect for every small region based on the area density of every small region in which the drawing region of a test piece is virtually devided into a mesh-like shape in a predetermined size, a calculation process (S104) to calculate a second amount of size correction corresponding to the linewidth size of the pattern drawn in the small region, a correction process (S106) to correct the first amount of size correction using the second amount of size correction, and a resizing process (S108) to resize the linewidth size of the pattern using the corrected first amount of correction, Therefore, the resizing of further high precision pattern against the size variation produced by the loading effect can be carried out. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008071928(A) 申请公布日期 2008.03.27
申请号 JP20060249141 申请日期 2006.09.14
申请人 NUFLARE TECHNOLOGY INC 发明人 YASHIMA JUN;SUZUKI JUNICHI;ABE TAKAYUKI
分类号 H01L21/027 主分类号 H01L21/027
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