发明名称 METHOD AND APPARATUS OF CLEANING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a cleaning method and a cleaning apparatus by which the property of a chemical is changed depending on contamination or the like and the chemical capability of the chemical is sufficiently brought out and which are suitable for single wafer treatment. SOLUTION: In the cleaning method, a base liquid B for cleaning is prepared, and supplied to a semiconductor substrate, and then a first chemical P1 is added to the base liquid B at first timing (t1). A first cleaning liquid that the base liquid B is added with the first chemical P1 is supplied to the semiconductor substrate, and the addition of the first chemical P1 to the base liquid B is stopped at second timing (t2). A second chemical P2 is added to the base liquid B at third timing (t3), and a second cleaning liquid that the base liquid B is added with the second chemical P2, and then the addition of the second chemical P2 to the base liquid B is stopped at fourth timing (t4). COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008071799(A) 申请公布日期 2008.03.27
申请号 JP20060246755 申请日期 2006.09.12
申请人 MITSUBISHI GAS CHEM CO INC 发明人 SOTOAKA RYUJI;YAMADA KENJI;TANAKA KEIICHI;AZUMA TOMOYUKI
分类号 H01L21/304;H01L21/027;H01L21/3213;H01L21/768 主分类号 H01L21/304
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