PRECURSOR HAVING OPEN LIGAND FOR RUTHENIUM-CONTAINING FILM DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide ruthenium precursors solving such a problem that: the conventional ruthenium film has poor adhesion to a substrate; impurities increasing the resistivity of the film remains in the film; the ruthenium precursor has low vapor pressure; an underlying layer is partially oxidized when oxygen is used as a co-reactant; and so on. SOLUTION: Ruthenium-containing precursors for ruthenium-containing films deposition comprises a ruthenium precursor selected from the group consisting mainly of: Ru(XOp)(XCp), Ru(XOp)2, Ru(allyl)3, RuX(allyl)2, RuX2(allyl)2, Ru(CO)x(amidinate)y, Ru(diketonate)2(amidinate)2, their derivatives and any mixture thereof. COPYRIGHT: (C)2008,JPO&INPIT