发明名称 Deposition reduction system for an ion implanter
摘要 A system for controlling the temperature of a semiconductor workpiece processing tool and surrounding structure, thereby reducing the deposition rates within an ion implanter. A faraday flag structure comprising a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the and a base supporting the strike plate that includes a thermally conductive material surrounding at least a portion of an outer perimeter of the strike plate. The faraday flag structure base defines a conduit for routing coolant through the thermally conductive material surrounding the strike plate. Positioned below the faraday flag is a thermally controlled cold trap that receives and retains foreign material appearing in ion implanter.
申请公布号 US2008073576(A1) 申请公布日期 2008.03.27
申请号 US20060506998 申请日期 2006.08.18
申请人 AXCELIS TECHNOLOGIES INC. 发明人 TAO TENG-CHAO;RING PHILIP J.
分类号 H01J37/08 主分类号 H01J37/08
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