发明名称 |
Deposition reduction system for an ion implanter |
摘要 |
A system for controlling the temperature of a semiconductor workpiece processing tool and surrounding structure, thereby reducing the deposition rates within an ion implanter. A faraday flag structure comprising a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the and a base supporting the strike plate that includes a thermally conductive material surrounding at least a portion of an outer perimeter of the strike plate. The faraday flag structure base defines a conduit for routing coolant through the thermally conductive material surrounding the strike plate. Positioned below the faraday flag is a thermally controlled cold trap that receives and retains foreign material appearing in ion implanter.
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申请公布号 |
US2008073576(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20060506998 |
申请日期 |
2006.08.18 |
申请人 |
AXCELIS TECHNOLOGIES INC. |
发明人 |
TAO TENG-CHAO;RING PHILIP J. |
分类号 |
H01J37/08 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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