发明名称 |
Method for Fabrication Group III Nitride Semiconductor |
摘要 |
A method for the fabrication of a Group III nitride semiconductor includes the steps of installing a substrate in a reaction vessel, forming a Group III nitride semiconductor on the substrate, causing a solid nitrogen compound to exist in the reaction vessel as a nitrogen source for a Group III nitride semiconductor and supplying a raw material gas as a source for a Group III element into the reaction vessel to fabricate the Group III nitride semiconductor.
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申请公布号 |
US2008076200(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20050662474 |
申请日期 |
2005.09.12 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
KOBAYAKAWA MASATO;MIKI HISAYUKI |
分类号 |
H01L21/00;H01L33/12;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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