发明名称 METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD
摘要 A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.
申请公布号 US2008076237(A1) 申请公布日期 2008.03.27
申请号 US20070947245 申请日期 2007.11.29
申请人 OC OERLIKON BALZERS AG 发明人 KROLL ULRICH;BUCHER CEDRIC;SCHMITT JACQUES;POPPELLER MARKUS;HOLLENSTEIN CHRISTOPH;BALLUTAUD JULIETTE;HOWLING ALAN
分类号 H01L21/38;C23C16/44;C23C16/455;H01L21/205;H01L21/22;H01L31/0288;H01L31/075;H01L31/18;H01L31/20 主分类号 H01L21/38
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