发明名称 |
PROCESS FOR PRODUCING SILICEOUS FILM AND SUBSTRATE WITH SILICEOUS FILM PRODUCED THEREBY |
摘要 |
<p>A process for producing a siliceous film with quality uniform irrespective of locality or groove interior or exterior wherein in the groove interior there is no void or crack. This substrate with siliceous film can be produced by first forming an insulating film of high hydrogen content on the surface of an uneven silicon substrate, subsequently coating the substrate with a composition containing a polysilazane compound and thereafter heating the coating product to thereby convert the polysilazane compound into a silicon dioxide film.</p> |
申请公布号 |
WO2007083654(A8) |
申请公布日期 |
2008.03.27 |
申请号 |
WO2007JP50577 |
申请日期 |
2007.01.17 |
申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP.;ISHIKAWA, TOMONORI;NAKAGUMA, TERUNO |
发明人 |
ISHIKAWA, TOMONORI;NAKAGUMA, TERUNO |
分类号 |
H01L21/316;C23C16/40;H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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