Memory unit e.g. magnetic RAM memory unit, for storing data, has potential supply unit supplying potential to amplifying circuits, such that leakage current through circuits is decreased or avoided in deactivated condition of circuits

摘要

The memory unit (100) has bit lines (104) electrically connected with the memory cells (106) of the memory cell array (107). Amplifying circuits (103) are electrically connected with the bit lines and amplifies electric signals guided in the bit lines, where the amplifying circuits are activated and deactivated by amplifier circuit control nodes. A potential supply unit supplies potential to the amplifying circuits, such that leakage current through the amplifier circuits is decreased or avoided in the deactivated condition of the amplifier circuits. An independent claim is also included for a method for improving reliability of a memory unit.