Heater for regulating/controlling surface temperature of substrate e.g. mold for glass lens, comprises a thermal pyrolytic layer in base support for providing specific maximum temperature variation, and having specific thermal conductivity

摘要

An apparatus for supporting a substrate (W) in a process chamber and regulating surface temperature of substrate comprises a base support having a surface to support substrate; a heating element (33) for heating the substrate to at least 300[deg] C; and at least one layer (600) of thermal pyrolytic graphite material embedded in base support, and having a thermal conductivity of at least 1000 W/m[deg] C in a plane parallel to substrate. The surface of the support has a maximum temperature variation of 10[deg] C between lowest point and a highest temperature point on surface of the support. An apparatus for supporting a wafer substrate (W) in a semiconductor process chamber, comprises a base substrate (10) containing bulk graphite, where the graphite base substrate has a top surface and a bottom surface facing away from the wafer supported on the apparatus; a first coating layer for coating the graphite base substrate; at least one layer (600) of thermal pyrolytic graphite (TPG) disposed on the first coating layer or disposed between the graphite base substrate and the first coating layer; a heating element (33) for heating the substrate to at least 300[deg] C and is disposed on the bottom surface of the coated graphite base substrate; an over-coating layer (300) for coating the base support; The coating layer comprises an electrically insulating material selected from one of an oxide, nitride, oxynitride of elements selected from aluminum (Al), boron (B), silicon (Si), gallium (Ga), refractory hard metals and/or transition metals. The over-coating layer comprises one of nitride, carbide, carbonitride, oxynitride of elements selected from B, Al, Si, Ga, yttrium, refractory hard metals, and/or transition metals; a zirconium phosphate having an sodium zirconium phosphate (NZP) structure of NaZr 2(PO 4) 3; a glass-ceramic composition containing at least one element selected from elements of the Group 2a, Group 3a and Group 4a; a barium oxide-alumina-boric oxide-silica (BaO-Al 2O 3-B 2O 3-SiO 2) glass; and a mixture of SiO 2 and a plasma-resistant material comprising an oxide or fluoride of yttrium (Y), scandium (Sc), lanthanum (La), cerium (Ce), gadolinium (Gd), europium (Eu), dysprosium (Dy) and yttrium-aluminum-garnet (YAG). The wafer supported by the apparatus has a maximum temperature variation of 10[deg] C between a lowest point and a highest temperature point on the wafer. The wafer substrate surface has a maximum temperature variation of 2[deg] C. The TPG layer has a thickness of 0.5-15 mm, and a thickness variation of less than 0.005 mm. The apparatus further comprises a susceptor disposed on the base support.