| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask structure and a method of etching for reducing the etch CD bias and improving pattern transfer fidelity. <P>SOLUTION: In one embodiment, a photomask 100 includes a translucent substrate 102 and an opaque multi-layer absorber layer 104 disposed over the substrate. The opaque multi-layer absorber layer 104 comprises a self-mask layer 108 disposed over a bulk absorber layer 106. The self-mask layer 108 comprises one of nitrogenized tantalum and silicon-based materials (TaSiON), tantalum boron oxide-based materials (TaBO) or oxidized and nitrogenized tantalum-based materials (TaON). The bulk absorber layer comprises one of tantalum silicide-based materials (TaSi), nitrogenized tantalum boride-based materials (TaBN) or tantalum nitride-based materials (TaN). The self-mask layer has a low etch rate during the bulk absorber layer etch step, thereby, acting as a hard mask. <P>COPYRIGHT: (C)2008,JPO&INPIT |
