| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image sensor having high reliability capable of reading information with high S/N by decreasing the number of connections between photoelectric conversion elements and a driving circuit. <P>SOLUTION: The image sensor has, on a glass substrate 2, a plurality of photoelectric conversion element arrays 3 such that photoelectric conversion elements each comprising a photoelectric conversion layer sandwiched between a pair of an anode and a cathode and formed of an organic compound layer are arranged in array, and an IC chip 4 which detects signal charges that photoelectric conversion elements photoelectrically convert and reads the signal charges out. An ITO anode 5a of each of photoelectric conversion elements constituting a photoelectric conversion element array 3 is formed integrally with wiring 5b connected to the IC chip 4 one to one and a cathode constituting each of the photoelectric conversion elements in the photoelectric conversion element array 3 is formed of wiring 6, having a pattern connected to two or more photoelectric conversion elements in common, on the photoelectric conversion element array 3. <P>COPYRIGHT: (C)2008,JPO&INPIT |
