| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor in which problems that a source electrode and a drain electrode are easily broken and that a contact resistance is high when an oxide semiconductor film such as an InGaZnO<SB>4</SB>thin film is provided between the source electrode and the drain electrode. SOLUTION: The thin-film transistor has at least a gate electrode, a gate insulating film, a source electrode, a gate electrode and an oxide semiconductor film on an insulating substrate. In the thin-film transistor, the gate electrode and the gate insulating film are sequentially stacked on the insulating substrate, the source and drain electrodes are provided on the gate insulating film, and the oxide semiconductor film is provided on the gate insulating film between the source and drain electrodes, and on the principal portion of the source electrode and the principal portion of the drain electrode. COPYRIGHT: (C)2008,JPO&INPIT
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