| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor element where contact resistance between an extremely small electrode and a contact layer can be made low, and to provide a method for manufacturing the semiconductor element without increasing the number of processes. SOLUTION: Prescribed semiconductor layers 2, 3, 4 and 5 are formed on a GaAs substrate 1. An ohmic contact layer 6 constituted of InGaAs is formed by an MOCVD method or an MBE method so that a surface becomes uneven. A metal electrode 9 whose width is 10μm or smaller is formed on the uneven surface of the ohmic contact layer 6. In an uneven structure in an interface between the ohmic contact layer 6 and the metal electrode 9, a difference of elevation is within a range of 0.1μm to 0.5μm, and an interval between adjacent peaks is within the range of 0.1μm to 0.5μm. COPYRIGHT: (C)2008,JPO&INPIT
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