| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a FUSI electrode structure in which a compositional variation and a junction leakage hardly occur, and to provide its manufacturing method. SOLUTION: An HDP-NSG 301 is formed on a silicon substrate 300, and a gate insulating film 302, a polysilicon film 303, and a hard mask film 304 are formed and patterned into the shape of an electrode. Side walls 306 and 307 are formed on the side surfaces of the polysilicon film 303 and the hard mask film 304 through an ion implantation process, furthermore ions are implanted into the silicon substrate 300, the hard mask film 304 is removed, and a stopper 312 is formed at the upper end of the polysilicon film 303 so as to specify the shape of the polysilicon film 303 (process up to (a) in figure). Thereafter, a nickel metal film 314 is formed on the polysilicon film 303 and subjected to a thermal treatment for the formation of the silicidated gate electrode 315 (processes (b) to (d) in figure). Expansion that occurs when a silicidation reaction takes place is restrained by the stopper 312, so that a junction leakage can be prevented from occurring. COPYRIGHT: (C)2008,JPO&INPIT
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