| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory whose ferroelectric capacitor area can be increased. SOLUTION: The semiconductor memory comprises a lower electrode 4, a first insulating region 41 formed in the same layer of the lower electrode 4 and laying out the lower electrode 4, ferroelectric films 5 formed on the lower electrode 4 and the first insulating region 41, an upper electrode 6 formed on the ferroelectric film 5, a second insulating region 61 formed in the same layer of the upper electrode 6 and laying out the upper electrode 6, and transistors T1, T2, T3 and T4 sandwiching a channel region and having first impurity regions 11a, 11c and 11e connected to the lower electroc 4 and second impurity regions 11b, 11d connected to the upper electrode 6. The adjacent ferroelectric capacitors C1, C2, C3 and C4 share either the upper electrode 6 or the lower electrode 4. COPYRIGHT: (C)2008,JPO&INPIT
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