| 摘要 |
A semiconductor integrated circuit device includes at least one MOS transistor that is formed in a main region of the circuit device. The main region has one conductivity type. The semiconductor integrated circuit device also includes a guard ring region formed surrounding the MOS transistor and in contact with the main region. The guard ring has the same conductivity type as the main region. The semiconductor integrated circuit device further includes an anode region formed facing the guard ring region and in contact with the main region. The anode region has the opposite conductivity type to the main region. The semiconductor integrated circuit device also includes a cathode region having at least a portion of the guard ring region. The anode region, the main region, and the cathode region form a diode.
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