| 摘要 |
A raw material solution for metal organic chemical vapor deposition having good film forming properties and excellent step coverage, and a composite oxide-based dielectric thin film produced by using the raw material, are provided. An improvement is made to the raw material solution for metal organic chemical vapor deposition having one or two or more organometallic compounds dissolved in an organic solvent, and the feature of the constitution lies in that the organic solvent is 1,3-dioxolane, or the organic solvent is a solvent mixture formed by mixing a first solvent consisting of 1,3-dioxolane, and a second solvent comprising one or two or more species selected from the group consisting of alcohols, alkanes, esters, aromatics, alkyl ethers and ketones, which is to be mixed with the 1,3-dioxolane.
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