发明名称 WAFER MACHINING METHOD AND APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a wafer machining method and apparatus, capable of efficiently machining a wafer without generating any crack therein by using laser beams, and efficiently removing fused deposits generated due to the machining without any adverse effect thereon with a simple constitution. <P>SOLUTION: The wafer machining method for machining a wafer 1 containing silicon by laser beams 2 comprises a laser beam machining step of machining the wafer 1 by applying the laser beams 2 to the wafer, and a plasma applying step of applying atmospheric plasma 5 containing fluorine-based gas to a part to be machined by the laser beams 2. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008068266(A) 申请公布日期 2008.03.27
申请号 JP20060246963 申请日期 2006.09.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INAMOTO YOSHIMASA;MATSUMORI MASASHI;INOUE KAZUHIRO;TSUJI HIROYUKI;NAKATSUKA SHIGEKI
分类号 B23K26/40;B23K26/00;B23K26/16;B23K101/40;H01L21/301;H01L21/302 主分类号 B23K26/40
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