发明名称 |
WAFER MACHINING METHOD AND APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wafer machining method and apparatus, capable of efficiently machining a wafer without generating any crack therein by using laser beams, and efficiently removing fused deposits generated due to the machining without any adverse effect thereon with a simple constitution. <P>SOLUTION: The wafer machining method for machining a wafer 1 containing silicon by laser beams 2 comprises a laser beam machining step of machining the wafer 1 by applying the laser beams 2 to the wafer, and a plasma applying step of applying atmospheric plasma 5 containing fluorine-based gas to a part to be machined by the laser beams 2. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008068266(A) |
申请公布日期 |
2008.03.27 |
申请号 |
JP20060246963 |
申请日期 |
2006.09.12 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
INAMOTO YOSHIMASA;MATSUMORI MASASHI;INOUE KAZUHIRO;TSUJI HIROYUKI;NAKATSUKA SHIGEKI |
分类号 |
B23K26/40;B23K26/00;B23K26/16;B23K101/40;H01L21/301;H01L21/302 |
主分类号 |
B23K26/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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