| 摘要 |
PROBLEM TO BE SOLVED: To provide a nanostructured integrated circuit including a nanostructured element, and a thin-film transistor (TFT) formed along the nanostructured element and a capacitor. SOLUTION: The TFT includes: a cylindrical nano wire including an inner semiconductor material 104 and an outer insulating layer 106; a source electrode 302 electrically connected to the source of the inner semiconductor material 104; a drain electrode 308 electrically connected to the drain of the internal semiconductor material 104; a gate that is the gate of the outer insulating layer and is provided between source and drain electrodes; and a gate electrode 304 formed on the gate section. A capacitor 306 includes a capacitor section of the cylindrical outer insulating layer 106, and a capacitor electrode 306 formed on the capacitor section, and is provided between the gate of the outer insulating layer, and the drain electrode 308 or source electrode 302. COPYRIGHT: (C)2008,JPO&INPIT |
