METHOD OF MANUFACTURING LAMINATED WAFER

摘要

PROBLEM TO BE SOLVED: To suppress the formation of an island shaped oxide in laminating interface in a method of manufacturing a laminated wafer formed by directly laminating a wafer for an active layer and a wafer for a supporting substrate without interposing an insulating film and thinning the wafer for an active layer. SOLUTION: In a laminated wafer, a surface layer at least including the bonded surface of a predetermined wafer for an active layer and a wafer for a supporting substrate has an oxygen concentration of 1.0×1018(atoms/cm3, Old ASTM) or lower. COPYRIGHT: (C)2008,JPO&INPIT