| 摘要 |
PROBLEM TO BE SOLVED: To suppress the parasite bipolar effect and short channel effect in a transistor that uses a semiconductor substrate having an SOI substrate, an SOS substrate, and other insulating layer without increasing the area of an element region by the use of a body contact. SOLUTION: A high concentration body region 27 is formed in a region that is near a source region 35, which is formed to have a depth not reaching the insulating layer 15, and is opposite to a channel region 39. The source region and high concentration body region are insulated by a first separation region 23 that is provided to have a depth not reaching the insulating layer. The channel region and high concentration body region are connected in a region under the source region and first separation region. COPYRIGHT: (C)2008,JPO&INPIT
|
