METAL-INSULATING FILM-SILICON CARBIDE SEMICONDUCTOR STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a metal-insulating film-silicon carbide semiconductor structure for manufacturing a semiconductor element having an excellent characteristic. SOLUTION: The metal-insulating film-semiconductor structure is manufactured by forming an epitaxial thin film having a groove part on the surface of the silicon carbide single crystal substrate, and by sequentially forming the insulating film and the metal film on the internal surface of the groove part. COPYRIGHT: (C)2008,JPO&INPIT