FIELD-EFFECT TRANSISTOR

摘要

A field effect transistor comprises a semiconductor multilayer structure including a carrier travel layer made of a nitride semiconductor, a gate electrode formed in a region corresponding to the channel region in the carrier travel layer on the semiconductor multilayer structure and having a first side wall surface on a first side and a second side wall surface on a second side, an insulting film formed on the gate electrode and covering at least one of the first and second side wall surfaces, a first ohmic electrode formed on the first side of the gate electrode on the semiconductor multilayer structure, a second ohmic electrode formed on the second side of the gate electrode on the semiconductor multilayer structure, and a passivation film including a first part extending from the first ohmic electrode toward the gate electrode in such a way as to cover the region between the first ohmic electrode and gate electrode on the surface of the semiconductor multilayer structure and a second part extending from the second ohmic electrode toward the gate electrode in such a way as to cover the region between the second ohmic electrode and gate electrode on the surface of the semiconductor multilayer structure. The insulating film is in contact with at least the first and second passivation film parts and has a composition different from that of the passivation film.