| 摘要 |
<P>PROBLEM TO BE SOLVED: To cut down resist solution consumption and achieve high in-plane uniformity in the film thickness of a resist film when a resist solution is applied through spin coating. <P>SOLUTION: A solvent S is supplied to the surface of a wafer W while the wafer W is rotated. Then, the rotation of the wafer W is accelerated until a first rotation speed is reached. During the accelerated rotation and rotation at the first rotation speed, a resist solution R is discharged to the center of the wafer W. Then, after the rotation of the wafer W is decelerated until a second rotation speed is reached, the resist solution R is discharged to the wafer W. Afterwards, the rotation speed of the wafer is increased to a third rotation speed higher than the second rotation speed and the wafer W is rotated at the third rotation speed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
