MANUFACTURING METHOD OF SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor chip with high bend resistance strength at a high yield by suppressing the generation of craks at manufacturing a conductor chip and cracks caused by dicing. SOLUTION: A layer 12 (Denuded Zone : DZ layer) which is free from a bulk micro defect (BMD) is formed at least on a major surface side in the thickness direction of a semiconductor wafer 11 wherein a semiconductor element is formed. A semiconductor chip intermediate body is formed by performing separation and discrete dicing for the semiconductor wafer 11. The semiconductor chip intermediate body is thinned from its rear surface side, and the semiconductor chip is made thinner than the DZ layer. COPYRIGHT: (C)2008,JPO&INPIT