发明名称 |
Circuit for Selectively Bypassing a Capacitive Element |
摘要 |
A circuit for selectively bypassing a capacitive element includes at least one NMOS device selectively connectable across the capacitive element to be bypassed, and at least first and second PMOS devices. The PMOS devices are selectively connectable together in series across the capacitive element to be bypassed. The NMOS device provides a first bypass path and the first and second PMOS devices collectively provide a second bypass path.
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申请公布号 |
US2008074814(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20060535719 |
申请日期 |
2006.09.27 |
申请人 |
BHATTACHARYA DIPANKAR;KOTHANDARAMAN MAKESHWAR;KRIZ JOHN C;MORRIS BERNARD L;SMOOHA YEHUDA |
发明人 |
BHATTACHARYA DIPANKAR;KOTHANDARAMAN MAKESHWAR;KRIZ JOHN C.;MORRIS BERNARD L.;SMOOHA YEHUDA |
分类号 |
H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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