发明名称 SILICON NITRIDE SINTERED COMPACT AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a dense silicon nitride sintered compact having a fine structure even in small grain boundary phase component and excellent wear resistance. <P>SOLUTION: The silicon nitride sintered compact comprises crystalline particles of silicon nitride, an amorphous grain boundary phase containing a group III element in periodic table, aluminum, magnesium, silicon, oxygen and nitrogen and a group VI element compound in periodic table which is dispersed in the grain boundary phase and contains &ge;0.1 mass% group III element expressed in terms of oxide, 0.05-0.5 mass% aluminum expressed in terms of oxide, &ge;0.3 mass% magnesium expressed in terms of oxide, &le;2.5 mass% in total of the group III element, aluminum and magnesium (which are expressed in terms of oxide), 0.1-2 mass% group VI element compound expressed in terms of oxide and &le;1.3 mass% oxygen. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008069031(A) 申请公布日期 2008.03.27
申请号 JP20060248013 申请日期 2006.09.13
申请人 KYOCERA CORP 发明人 FUKUTOME TAKEO;TATENO SHUICHI;WATANABE TAKASHI
分类号 C04B35/584 主分类号 C04B35/584
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