| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high dielectric insulating film having an excellent characteristic such as a leak characteristic and the like. <P>SOLUTION: This insulating film is one in which fluorine is introduced into a metal oxide composed of a first metal and oxygen. At least one of second metals, each having a valence smaller than a valence of nitrogen or the first metal forming the metal oxide, is introduced thereinto upon introduction of fluorine, and when an amount of nitrogen or the second metal is represented by [X] and an amount of fluorine is represented by [F], ä[X]-[F]}/2≤8.4 atomic%. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
