| 摘要 |
A method for manufacturing a semiconductor device includes: forming a first film on a base body; crystallizing the first film by heating; thinning the crystallized first film; and forming a second film on the thinned first film. The first film is made of a material having a high dielectric constant than silicon oxide. A semiconductor device includes: a silicon substrate; a tunnel insulating film provided on the silicon substrate; a floating gate electrode provided on the tunnel insulating film; a polycrystalline insulating film provided on the floating gate electrode; and a control gate electrode provided on the polycrystalline insulating film. The polycrystalline insulating film has a high dielectric constant than silicon oxide, and the polycrystalline insulating film is made of crystal grains which are substantially monocrystalline in a film thickness direction
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