发明名称 Aluminum nitride sintered body
摘要 [Object] It is an object of the present invention to provide an aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. [Solution means] The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
申请公布号 US2008076658(A1) 申请公布日期 2008.03.27
申请号 US20060527323 申请日期 2006.09.26
申请人 TOKUYAMA CORPORATION 发明人 KANECHIKA YUKIHIRO;AZUMA MASANOBU
分类号 C04B35/581 主分类号 C04B35/581
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