发明名称 PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM
摘要 A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C 1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C 2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C 3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: <?in-line-formulae description="In-line Formulae" end="lead"?>C2<C3<C1. <?in-line-formulae description="In-line Formulae" end="tail"?>
申请公布号 US2008073737(A1) 申请公布日期 2008.03.27
申请号 US20070941675 申请日期 2007.11.16
申请人 CANON KABUSHIKI KAISHA 发明人 YUZURIHARA HIROSHI;MISHIMA RYUICHI;WATANABE TAKANORI;ICHIKAWA TAKESHI;TAMURA SEIICHI
分类号 H01L31/0232;H01L27/146;H01L27/148;H01L31/10;H01L31/103;H01L31/18 主分类号 H01L31/0232
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