发明名称 Scan pattern for an ion implanter
摘要 An ion implanter includes an ion beam generator configured to generate an ion beam and direct the ion beam towards a workpiece, wherein relative motion between the ion beam and the workpiece produces a scan pattern on a front surface of said workpiece. The scan pattern has an oscillating pattern on at least a portion of said front surface of said workpiece.
申请公布号 US2008073575(A1) 申请公布日期 2008.03.27
申请号 US20060473860 申请日期 2006.06.23
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 DZENGELESKI JOSEPH P.
分类号 H01J37/08 主分类号 H01J37/08
代理机构 代理人
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