| 摘要 |
A method for cleaning an SOI wafer having a silicon thin film on an insulator, wherein the SOI wafer is subjected to two-fluid cleaning in which two or more fluids are mixed and used for cleaning the wafer. Thereby, there is provided a method for cleaning an SOI wafer that sufficiently reduces impurity etc. adhered to the surface of the SOI wafer with inhibiting a decrease of film thickness and deterioration of haze level of the SOI layer of the SOI wafer as much as possible.
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