| 摘要 |
The size of a gate contact region is decreased by connecting a gate connection electrode embedded in a trench and a gate wiring formed over the gate connection electrode, without forming another conductive film different from the gate connection electrode or the gate wiring. The semiconductor body includes an active cell region and a gate contact region. The active cell region includes a vertical MOSFET with a gate electrode disposed in a first trench. The gate contact region includes the gate connection electrode disposed in a second trench and formed of a same conductive material with the gate electrode. The gate connection electrode includes an embedded part formed in the second trench and an extended part extended therefrom and formed outside the second trench. An interlayer insulation film formed on the gate connection electrode and having a via hole exposing at least a portion of the embedded part of the gate connection electrode.
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