METHOD AND APPARATUS FOR PLASMA TREATMENT

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable plasma treatment method with respect to the attraction of a wafer to a substrate electrode, and to provide its apparatus.

SOLUTION: This plasma treatment method provides for a material to be treated by using the plasma treatment apparatus including: a vacuum treatment chamber; a substrate electrode having an electrostatic attraction film for the attraction of the material to be treated; a DC power source for electrostatic attraction and a substrate bias high frequency power source which are connected to the substrate electrode; and a plasma generating means for generating plasma in the vacuum treatment chamber. A high frequency voltage Vpp applied on the substrate electrode is monitored and the output voltage of the DC power source for electrostatic attraction is controlled based on the monitored Vpp signal. Consequently, the voltage on the electrostatic attraction film is kept to be a desired value and also the output of the substrate bias high frequency power source is temporarily controlled in a lamp shape.

COPYRIGHT: (C)2008,JPO&INPIT