PATTERN FORMATION METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a pattern formation method which prevents a peeling residue at the time of peeling an antistatic film and is excellent in an in-plane uniformity after developing.

SOLUTION: The pattern formation method comprises the steps of: forming a resist film on a semiconductor substrate; forming the antistatic film on the resist film; exposing an electron beam to the resist film; peeling the antistatic film by using peeling liquid with a temperature of 30°C or more and 35°C or less; and performing a development to the resist film to form predetermined patterns.

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