LASER ANNEALING APPARATUS, SEMICONDUCTOR FILM SUBSTRATE, ELEMENT SUBSTRATE AND ELECTROOPTICAL APPARATUS

摘要

PROBLEM TO BE SOLVED: To selectively and efficiently execute dehydrogenation processing and crystallization processing for a predetermined region of a hydrogenated amorphous semiconductor film. SOLUTION: A laser annealing apparatus 100 is provided with one or more laser oscillation sources, a first laser source 120 for irradiating a hydrogenated amorphous semiconductor film 20 with a first laser beam X to reduce hydrogen concentration of a region irradiated with the first laser beam X, and one or more laser oscillation sources not serving as the laser oscillation source of the first laser source 120. The apparatus 100 is provided with a second laser source 130 for irradiating at least one part of the region of the semiconductor film 20 irradiated with the first laser beam X with a second laser beam Y to crystallize the region irradiated with the second laser beam Y; and a relative scanning means 150 for relatively scanning the first and second laser beams X and Y simultaneously or independently for the semiconductor film 20. COPYRIGHT: (C)2008,JPO&INPIT