发明名称 THIN FILM DEPOSITION METHOD AND THIN FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a thin film deposition method and a thin film deposition apparatus in which two or more pairs of targets each connected with an alternating current power supply are arranged side by side, fluctuation in glow discharge caused by an output potential difference between the targets adjacent to each other and connected to the different alternating current power supplies is suppressed, thereby a stable plasma atmosphere is formed and high arc energy produced when abnormal discharge is generated can be suppressed. SOLUTION: In the thin film deposition method, among pairs of targets arranged side by side, the outputs between the targets adjacent to each other and connected to different alternating current power supplies are compared, and when the output potential difference exceeds a prescribed value, the outputs of the alternating current power supplies are adjusted, and the output potential difference is converged to the above prescribed value or below. In the thin film deposition apparatus, the thin film deposition method is implemented. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008069408(A) 申请公布日期 2008.03.27
申请号 JP20060249220 申请日期 2006.09.14
申请人 ULVAC JAPAN LTD 发明人 KOBAYASHI HIROSHI;KOMATSU TAKASHI;NAKAMURA KYUZO;HORISHITA YOSHIKUNI;YODA HIDENORI;SATO SHIGEMITSU;NAKAJIMA TOSHIO
分类号 C23C14/34;C23C14/54 主分类号 C23C14/34
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