WAFER PROCESSING HARDWARE FOR EPITAXIAL DEPOSITION WITH WHICH AUTO-DOPING AND BACK SURFACE DEFECT ARE DECREASED

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for depositing an epitaxial semiconductor layer with which auto-doping of a front surface of a substrate as well as a back surface defect of the substrate possibly occurring during an epitaxial deposition process for forming the epitaxial layer on the front surface of the substrate are reduced, and to provide a method of using the apparatus. SOLUTION: The apparatus includes: means for forming a wafer gap region of an adjustable width between the back surface of the substrate and a susceptor plate; a means 1206 for ventilating auto dopant from the wafer gap region by a flow of inert gas while controlling or impeding the flow of the inert gas toward the front surface of the substrate; and a means 1205 for passing reactant gas onto the front surface of the substrate while controlling or impeding a flow of the reactant gas near the back surface of the substrate. COPYRIGHT: (C)2008,JPO&INPIT