发明名称 |
METHOD FOR FORMING SILICON-GERMANIUM EPITAXIAL LAYER |
摘要 |
A method for forming a SiGe epitaxial layer is described. A first SEG process is performed under a first condition, consuming about 1% to 20% of the total process time for forming the SiGe epitaxial layer. Then, a second SEG process is performed under a second condition, consuming about 99% to 80% of the total process time. The first condition and the second condition include different temperatures or pressures. The first and the second SEG processes each uses a reactant gas that includes at least a Si-containing gas and a Ge-containing gas.
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申请公布号 |
US2008076236(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20060309739 |
申请日期 |
2006.09.21 |
申请人 |
CHIANG JIH-SHUN;SHIH HUNG-LIN;TANG LI-YUEN;CHIANG TIAN-FU;FAN MING-CHI;LIAO CHIN-I;CHIEN CHIN-CHENG |
发明人 |
CHIANG JIH-SHUN;SHIH HUNG-LIN;TANG LI-YUEN;CHIANG TIAN-FU;FAN MING-CHI;LIAO CHIN-I;CHIEN CHIN-CHENG |
分类号 |
H01L21/20;H01L21/36;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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