发明名称 Multi-port memory device
摘要 A multi-port memory device includes: a bank having a plurality of matrices; a plurality of test data input/output units where data is input/output using a test mode for detecting a defective memory cell; a plurality of ports converted into a decoding device for decoding a command/address at the test mode; a plurality of data transfer lines for transferring data between the matrices and the test data I/O units, wherein the data transfer lines is grouped into the number of matrices; and a plurality of temporary storing units included between the data transfer lines and the matrices for temporarily storing data.
申请公布号 US2008077746(A1) 申请公布日期 2008.03.27
申请号 US20060647407 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HUR HWANG
分类号 G06F13/00 主分类号 G06F13/00
代理机构 代理人
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