| 摘要 |
A magnetoresistive element 11 is formed with inclusion of a free layer 12 , a pinned layer 13 , an antiferromagnetic layer 14 for pinning the pinned layer 13 , an intermediate layer 15 provided between the free layer 12 and the pinned layer 13 , and a ferromagnetic layer 16 for applying a longitudinal bias magnetic field to the free layer. After initial magnetization, characteristic evaluation is conducted for the magnetoresistive element 11 . Intensity of longitudinal bias field is adjusted by magnetizing again in a direction different from that of the initial magnetization, if required, on the basis of the evaluation result.
|
