发明名称 |
GROUP III NITRIDE WHITE LIGHT EMITTING DIODE |
摘要 |
<p>A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an In<SUB>x</SUB>Ga<SUB>1-x</SUB>N quantum well layer, an In<SUB>y</SUB>Ga<SUB>1-y</SUB>N barrier layer (x>0.3 or x=0.3), and In<SUB>z</SUB>Ga<SUB>1-z</SUB>N quantum dots, where x<y<z=1.</p> |
申请公布号 |
WO2008035447(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
WO2006JP319396 |
申请日期 |
2006.09.22 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;SUMITOMO ELECTRIC INDUSTRIES, LTD.;CHUA, SOO-JIN;CHEN, PENG;CHEN, ZHEN;TAKASUKA, EIRYO |
发明人 |
CHUA, SOO-JIN;CHEN, PENG;CHEN, ZHEN;TAKASUKA, EIRYO |
分类号 |
H01L33/06;H01L33/30;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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