GERMANIUM SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

摘要

A germanium semiconductor device is provided to form a source/drain with a shallow junction depth by growing a silicon-germanium layer including impurities of an increased high density on a source/drain region while performing a delta doping process on the source/drain region and by forming the source/drain region by a heat treatment. A shallow trench is formed on a substrate(11) to form an isolation layer(12). After a silicon-nitride layer is formed on the substrate, the silicon-nitride layer is selectively etched to expose a source/drain formation region. A heat treatment is performed on the substrate in a high-temperature hydrogen atmosphere in a CVD apparatus. A delta doping process is performed on the upper portion of the exposed source/drain formation region so that impurities are deposited on the substrate to form a delta doping layer. An impurity-containing silicon-germanium layer(32) is selectively grown on the delta doping layer. A heat treatment process is performed on the substrate to form a source/drain region(41) by a diffusion of the impurities. An insulation layer is deposited on the front surface of the substrate. The insulation layer is etched to form a source/drain contact part to come in contact with a source/drain terminal. Metal is deposited on the insulation layer having the source/drain contact part to form metal-silicide. A source/drain terminal(62) is formed to come in contact with the silicide.