发明名称 |
DOUBLE LAYER ETCH STOP LAYER STRUCTURE FOR ADVANCED SEMICONDUCTOR PROCESSING TECHNOLOGY |
摘要 |
A semiconductor device and a method for forming the same provides a double layer contact etch stop layer selectively formed over PMOS transistors with only a single silicon nitride contact etch stop layer formed over NMOS transistors on the same chip. The composite contact etch stop layer structure formed over the PMOS transistor avoids data retention and plasma induced damage issue associated with the PMOS transistor and a single silicon nitride contact etch stop layer formed over NMOS transistors avoids device shifting issues.
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申请公布号 |
US2008073724(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20060534536 |
申请日期 |
2006.09.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIANG SHENG-HUI;CHEN CHIA-LIN;KO CHIN-YUAN |
分类号 |
H01L29/94;H01L21/8238 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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