METHOD FOR FORMING A PRE-METAL DIELECTRIC LAYER USING AN ENERGY BEAM TREATMENT

摘要

The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes, among other steps, forming a gate structure (605) over a substrate (110), the gate structure having source/drain regions (1110) proximate thereto and in, on or over the substrate, forming a pre-metal dielectric layer (1310) over the gate structure and source/drain regions, and subjecting the pre-metal dielectric layer to an energy beam treatment, the energy beam treatment configured to change a stress of the pre-metal dielectric layer, and thus change a stress in the substrate therebelow.